Invention Grant
- Patent Title: Depletion MOSFET driver
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Application No.: US13928250Application Date: 2013-06-26
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Publication No.: US09806553B2Publication Date: 2017-10-31
- Inventor: Mark Telefus
- Applicant: Flextronics AP, LLC
- Applicant Address: US CO Broomfield
- Assignee: Flextronics AP, LLC
- Current Assignee: Flextronics AP, LLC
- Current Assignee Address: US CO Broomfield
- Agency: Haverstock & Owens LLP
- Main IPC: H02J7/02
- IPC: H02J7/02 ; H04B5/00 ; H02J50/12 ; H02J50/10 ; H03K17/00 ; H02M3/335 ; H02M3/28

Abstract:
A driver circuit is configured using a depletion-mode MOSFET to supply an output voltage across an output capacitor. The driver circuit includes a resistor positioned between two terminals of the MOSFET. In the case of an n-channel depletion-mode MOSFET, the resistor is coupled to the source and the gate. The circuit is a current controlled depletion driver that turns OFF the depletion-mode MOSFET by driving a reverse current through the resistor to establish a negative potential at the gate relative to the source. A Zener diode is coupled between the source of the depletion-mode MOSFET and the output capacitor to establish a voltage differential between the output and the MOSFET source.
Public/Granted literature
- US20140266321A1 DEPLETION MOSFET DRIVER Public/Granted day:2014-09-18
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