Invention Grant
- Patent Title: Integrated Circuit Devices Having Clock Gating Circuits Therein
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Application No.: US15212406Application Date: 2016-07-18
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Publication No.: US09806695B2Publication Date: 2017-10-31
- Inventor: Byung-jo Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0132600 20150918
- Main IPC: G06F1/04
- IPC: G06F1/04 ; H03K3/012 ; H03K5/15

Abstract:
An integrated circuit device includes a clock gating circuit, which is configured to generate a first plurality of clocks in response to a first reference clock at a first frequency and a plurality of operation enable signals. A plurality of functional circuits are provided, which are responsive to respective ones of the first plurality of clocks. The plurality of functional circuits is configured to generate respective ones of the plurality of operation enable signals, with each of the plurality of operation enable signals having a first logic state that enables a respective clock within said clock gating circuit and a second logic state that disables the respective clock within said clock gating circuit.
Public/Granted literature
- US20170085254A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-03-23
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