Invention Grant
- Patent Title: Plasma processing apparatus
-
Application No.: US13794954Application Date: 2013-03-12
-
Publication No.: US09807862B2Publication Date: 2017-10-31
- Inventor: Hachishiro Iizuka
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKOYO ELECTRON LIMITED
- Current Assignee: TOKOYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2012-054484 20120312
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H05H1/46

Abstract:
A plasma processing apparatus includes an ICP antenna, provided outside a processing chamber opposite to a mounting table, for supplying a high frequency power supply into the processing chamber, and a window member made of a conductor, disposed between the mounting table and the ICP antenna, forming a part of a wall of the processing chamber. The window member includes transmission units for transmitting the high frequency power in a thickness direction of the window member. Each of transmission units has a slit, which extends through the window member in the thickness direction and is configured such that its width is changeable.
Public/Granted literature
- US20130264014A1 PLASMA PROCESSING APPARATUS Public/Granted day:2013-10-10
Information query