Invention Grant
- Patent Title: Compound, material for forming underlayer film for lithography, underlayer film for lithography and pattern forming method
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Application No.: US14766499Application Date: 2014-02-04
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Publication No.: US09809601B2Publication Date: 2017-11-07
- Inventor: Masatoshi Echigo , Takashi Makinoshima , Naoya Uchiyama
- Applicant: Mitsubishi Gas Chemical Company, Inc.
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Gas Chemical Company, Inc.
- Current Assignee: Mitsubishi Gas Chemical Company, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Fitch, Even, Tabin & Flannery LLP
- Priority: JP2013-023809 20130208
- International Application: PCT/JP2014/052530 WO 20140204
- International Announcement: WO2014/123107 WO 20140814
- Main IPC: C07D493/14
- IPC: C07D493/14 ; C07D495/14 ; C07D493/04 ; C07D495/04 ; G03F7/11 ; C07D311/82 ; C07D307/92 ; C07D333/76 ; C07D335/12 ; H01L21/311 ; C09D7/12 ; G03F7/16 ; G03F7/20 ; G03F7/32 ; G03F7/075 ; G03F7/09

Abstract:
The material for forming an underlayer film for lithography of the present invention contains a compound having a structure represented by the following general formula (1). (in formula (1), each X independently represents an oxygen atom or a sulfur atom, R1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, R2 represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, m is an integer of 0 to 3, n is an integer of 1 to 4, p is 0 or 1, and q is an integer of 1 to 100.).
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