Invention Grant
- Patent Title: Methods for top-down fabrication of wafer scale TMDC monolayers
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Application No.: US15061696Application Date: 2016-03-04
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Publication No.: US09809903B2Publication Date: 2017-11-07
- Inventor: Saptarshi Das , Mrinal K. Bera , Andreas K. Roelofs , Mark Antonio
- Applicant: UChicago Argonne, LLC
- Applicant Address: US IL Chicago
- Assignee: UChicago Argonne, LLC
- Current Assignee: UChicago Argonne, LLC
- Current Assignee Address: US IL Chicago
- Agency: Foley & Lardner LLP
- Main IPC: C25F5/00
- IPC: C25F5/00 ; C30B33/10 ; C25F3/02 ; C30B29/46 ; C30B33/04
Abstract:
A method of forming a TMDC monolayer comprises providing a multi-layer transition metal dichalcogenide (TMDC) film. The multi-layer TMDC film comprises a plurality of layers of the TMDC. The multi-layer TMDC film is positioned on a conducting substrate. The conducting substrate is contacted with an electrolyte solution. A predetermined electrode potential is applied on the conducting substrate and the TMDC monolayer for a predetermined time. A portion of the plurality of layers of the TMDC included in the multi-layer TMDC film is removed by application of the predetermined electrode potential, thereby leaving a TMDC monolayer film positioned on the conducting substrate.
Public/Granted literature
- US20170253996A1 SYSTEMS AND METHODS FOR TOP-DOWN FABRICATION OF WAFER SCALE TMDC MONOLAYERS Public/Granted day:2017-09-07
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