Invention Grant
- Patent Title: MTJ-based content addressable memory with measured resistance across matchlines
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Application No.: US15205813Application Date: 2016-07-08
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Publication No.: US09812205B2Publication Date: 2017-11-07
- Inventor: Swaroop Ghosh , Cheng Wei Lin
- Applicant: Swaroop Ghosh , Cheng Wei Lin
- Applicant Address: US FL Tampa
- Assignee: UNIVERSITY OF SOUTH FLORIDA
- Current Assignee: UNIVERSITY OF SOUTH FLORIDA
- Current Assignee Address: US FL Tampa
- Agency: Saliwanchik, Lloyd & Eisenschenk
- Main IPC: G11C15/00
- IPC: G11C15/00 ; G11C15/04 ; G11C15/02 ; G11C11/16
Abstract:
Embodiments of the subject invention provide a three transistor, two domain-wall-based magnetic tunnel junction CAM cell (3T-2DW-MTJ CAM). A four transistor, two magnetic tunnel junction ternary CAM cell (4T-2MTJ TCAM) is also provided. An array of the provided CAM cells forms words of various lengths, such as 4-bit, 8-bit, and 16-bit words. Longer CAM words can be formed by an array having hierarchical structures of CAM cells having smaller word sizes, such as 4-bit words or 8-bit words.
Public/Granted literature
- US20170018308A1 MTJ-BASED CONTENT ADDRESSABLE MEMORY Public/Granted day:2017-01-19
Information query
