Invention Grant
- Patent Title: 3D flash memory device having different dummy word lines and data storage devices including same
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Application No.: US14162905Application Date: 2014-01-24
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Publication No.: US09812206B2Publication Date: 2017-11-07
- Inventor: Sang-Wan Nam , Kitae Park
- Applicant: Sang-Wan Nam , Kitae Park
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0053212 20130510
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/16 ; G11C16/34 ; G11C16/08 ; G11C16/10
Abstract:
A three-dimensional (3D) flash memory includes a first dummy word line disposed between a ground select line and a lowermost main word line, and a second dummy word line of different word line configuration disposed between a string select line and an upper most main word line.
Public/Granted literature
- US20140334232A1 3D FLASH MEMORY DEVICE HAVING DIFFERENT DUMMY WORD LINES AND DATA STORAGE DEVICES INCLUDING SAME Public/Granted day:2014-11-13
Information query
