Invention Grant
- Patent Title: Etching method
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Application No.: US14933259Application Date: 2015-11-05
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Publication No.: US09812292B2Publication Date: 2017-11-07
- Inventor: Hidekazu Iida
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer Burns & Crain, Ltd.
- Priority: JP2014-228755 20141111
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/311 ; H01L21/67 ; H01J37/32 ; H01L21/683 ; H01L21/306 ; H01L21/02
Abstract:
Disclosed herein is an etching method for a workpiece. The etching method includes the steps of dissociating an inert gas to form a plasma in an evacuated condition of a chamber to thereby remove moisture present on the workpiece set in the chamber, and next dissociating a fluorine-based stable gas instead of the inert gas to form a plasma in the chamber after removing the moisture to thereby dry-etch the workpiece.
Public/Granted literature
- US20160260624A1 ETCHING METHOD Public/Granted day:2016-09-08
Information query
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