Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15359611Application Date: 2016-11-22
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Publication No.: US09812388B2Publication Date: 2017-11-07
- Inventor: Yoshihiko Shimanuki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2016-013151 20160127
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L23/498 ; H01L21/56 ; H01L23/00 ; H01L23/495

Abstract:
A semiconductor device includes a die pad, a semiconductor chip with a bonding pad being formed, a lead one end of which is located in the vicinity of the semiconductor chip, a coupling wire that connects an electrode and the lead, and a sealing body that seals the semiconductor chip, the coupling wire, a part of the lead, and a part of the die pad. A lower surface of the die pad is exposed from a lower surface of the sealing body, the die pad and the coupling wire are comprised of copper, and a thickness of the semiconductor chip is larger than the sum of a thickness of the die pad and a thickness from an upper surface of the semiconductor chip to an upper surface of the sealing body.
Public/Granted literature
- US20170213788A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-07-27
Information query
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