A self destructing device includes: at least one active electronic region and at least one thermal destruction trigger; at least one chamber enclosed by the semiconducting material, wherein the at least one chamber contains an etchant material, wherein in response to activation of the at least one thermal destruction trigger, the self-destructing device is configured to: generate heat to cause decomposition of at least a first portion of the etchant material; decompose at least a first portion of the etchant material; etch at least a second portion of the second oxide layer provided between the semiconducting material and the at least one chamber at a first temperature; expose the etchant material to the semiconducting material to cause an exothermic reaction generating more heat; enable spread of the exothermic reaction to etch at least a third portion of the first oxide layer and to etch the top layer.