Invention Grant
- Patent Title: Driving circuit for power switch
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Application No.: US15052170Application Date: 2016-02-24
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Publication No.: US09813051B2Publication Date: 2017-11-07
- Inventor: Zhenghao Cui
- Applicant: STMicroelectronics (Beijing) R&D Co. Ltd
- Applicant Address: CN Beijing
- Assignee: STMicroelectronics (Beijing) R&D Co. Ltd
- Current Assignee: STMicroelectronics (Beijing) R&D Co. Ltd
- Current Assignee Address: CN Beijing
- Agency: Gardere Wynne Sewell LLP
- Priority: CN201610088186 20160216
- Main IPC: H03K17/04
- IPC: H03K17/04 ; H03K17/041 ; H03K17/16

Abstract:
An electronic circuit is for switching a power transistor having a drain coupled to a drain node, a source coupled to a lower voltage supply, and a gate coupled to a gate node. The electronic circuit includes first current generation circuitry to generate a first current to flow into the gate node in response to assertion off an ON signal, the first current being substantially constant. Second current generation circuitry generates a second current to flow into the gate node in response to deassertion of an OFF signal, the second current being inversely proportional to a gate to source voltage of the power transistor. First comparison circuitry compares a drain voltage at the drain node to a reference voltage, and activates third current generation circuitry to generate a third current to flow into the gate node when the drain voltage is less than the reference voltage.
Public/Granted literature
- US20170237421A1 DRIVING CIRCUIT FOR POWER SWITCH Public/Granted day:2017-08-17
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