Invention Grant
- Patent Title: Nonvolatle memory device and memory system having the same, and related memory management, erase and programming methods
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Application No.: US15178135Application Date: 2016-06-09
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Publication No.: US09818485B2Publication Date: 2017-11-14
- Inventor: Eun Chu Oh , Jongha Kim , Junjin Kong
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0075596 20120711
- Main IPC: G11C16/16
- IPC: G11C16/16 ; G06F12/02 ; G11C16/34 ; G11C16/04 ; G11C11/56
Abstract:
An erase method of a nonvolatile memory device includes setting an erase mode, and performing one of a normal erase operation and a quick erase operation according to the set erase mode. The normal erase operation is performed to set a threshold voltage of a memory cell to an erase state which is lower than a first erase verification level. The quick erase operation is performed to set a threshold voltage of a memory cell to a pseudo erase state which is lower than a second erase verification level. The second erase verification level is higher than the first erase verification level.
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