Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor manufacturing apparatus
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Application No.: US15408554Application Date: 2017-01-18
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Publication No.: US09818627B2Publication Date: 2017-11-14
- Inventor: Shinsuke Kimura , Yoshihiro Ogawa
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-007296 20130118
- Main IPC: H01L21/67
- IPC: H01L21/67 ; B08B3/08 ; B08B7/00
Abstract:
A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.
Public/Granted literature
- US20170125267A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MANUFACTURING APPARATUS Public/Granted day:2017-05-04
Information query
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