Invention Grant
- Patent Title: Quasi-vertical power MOSFET and methods of forming the same
-
Application No.: US13219283Application Date: 2011-08-26
-
Publication No.: US09818859B2Publication Date: 2017-11-14
- Inventor: Chi-Chih Chen , Kun-Hsuan Tien , Ruey-Hsin Liu
- Applicant: Chi-Chih Chen , Kun-Hsuan Tien , Ruey-Hsin Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/66 ; H01L29/417 ; H01L29/423 ; H01L29/08
Abstract:
A MOSFET includes a semiconductor substrate having a top surface, a body region of a first conductivity type in the semiconductor substrate, and a double diffused drain (DDD) region having a top surface lower than a bottom surface of the body region. The DDD region is of a second conductivity type opposite the first conductivity type. The MOSFET further includes a gate oxide, and a gate electrode separated from the body region by the gate oxide. A portion of the gate oxide and a portion of the gate electrode are below the top surface of the body region.
Public/Granted literature
- US20130049108A1 Quasi-Vertical Power MOSFET and Methods of Forming the Same Public/Granted day:2013-02-28
Information query
IPC分类:
