Invention Grant
- Patent Title: Semiconductor light-emitting element
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Application No.: US15253330Application Date: 2016-08-31
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Publication No.: US09818911B2Publication Date: 2017-11-14
- Inventor: Hiroaki Yamamoto , Susumu Ohmi , Yufeng Weng , Kiminori Tanabe
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Sakai
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Sakai
- Agency: Morrison & Foerster LLP
- Priority: JP2013-182039 20130903
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/32 ; H01L33/42 ; H01L33/16 ; H01L33/12 ; H01L33/00 ; H01L33/02

Abstract:
A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.
Public/Granted literature
- US20160372632A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT Public/Granted day:2016-12-22
Information query
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