Invention Grant
- Patent Title: Hotswap operations for programmable logic devices
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Application No.: US14609181Application Date: 2015-01-29
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Publication No.: US09819174B2Publication Date: 2017-11-14
- Inventor: Christopher W. Dix , Cleo Mui , Cheng-Jen Gwo , Joel Coplen , Srirama Chandra
- Applicant: Lattice Semiconductor Corporation
- Applicant Address: US OR Portland
- Assignee: Lattice Semiconductor Corporation
- Current Assignee: Lattice Semiconductor Corporation
- Current Assignee Address: US OR Portland
- Agent Michael Garrabrants
- Main IPC: H02H9/02
- IPC: H02H9/02 ; H02H9/00

Abstract:
Techniques are provided to control hotswap operations with programmable logic devices (PLDs). In particular, a MOSFET is provided to limit an in-rush current drawn from a power supply by capacitive components of an electronic assembly when it is plugged into the live, power supply. A controller with an algorithm is provided to control the MOSFET based on the in-rush current detected at the MOSFET. As such, a feedback control loop is established to selectively bias the gate of the MOSFET based on the detected in-rush current. The algorithm may limit the in-rush current based on a Safe Operating Area (SOA) of the MOSFET. The hotswap process may include multiple phases each with a voltage and/or current limit modeling the voltages and currents of the SOA. The algorithm may transition through the phases with the respective current and/or voltage limits during the hotswap process.
Public/Granted literature
- US20160226241A1 HOTSWAP OPERATIONS FOR PROGRAMMABLE LOGIC DEVICES Public/Granted day:2016-08-04
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