Invention Grant
- Patent Title: Memory device with redundant IO circuit
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Application No.: US15076416Application Date: 2016-03-21
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Publication No.: US09824780B2Publication Date: 2017-11-21
- Inventor: Atul Katoch
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/44

Abstract:
A device includes input/output (IO) circuits, a redundant IO circuit and a redundant IO control unit. The input/output (IO) circuits coupled to a memory array. The redundant IO circuit is coupled to the memory array and the plurality of IO circuits. The redundant IO control unit is coupled to the IO circuits and the redundant IO circuit. In response to a failure column address signal, the redundant IO control unit configures the redundant IO circuit to substitute a failed IO circuit of the IO circuits. The redundant IO control unit includes a storage circuit, and during a shutdown mode, the storage circuit is configured to store the failure column address signal.
Public/Granted literature
- US20160293277A1 MEMORY DEVICE WITH REDUNDANT IO CIRCUIT Public/Granted day:2016-10-06
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