- Patent Title: Semiconductor formation by lateral diffusion liquid phase epitaxy
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Application No.: US13812089Application Date: 2012-05-17
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Publication No.: US09824892B2Publication Date: 2017-11-21
- Inventor: Adrian Kitai , Haoling Yu , Bo Li
- Applicant: Adrian Kitai , Haoling Yu , Bo Li
- Applicant Address: CA Hamilton, Ontario
- Assignee: McMaster University
- Current Assignee: McMaster University
- Current Assignee Address: CA Hamilton, Ontario
- Agency: Pepper Hamilton LLP
- International Application: PCT/CA2012/050327 WO 20120517
- International Announcement: WO2012/155273 WO 20121122
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; C30B9/10 ; C30B19/12 ; C30B29/06
Abstract:
A method for growing semiconductor wafers by lateral diffusion liquid phase epitaxy is described. Also provided are a refractory device for practicing the disclosed method and semiconductor wafers prepared by the disclosed method and device. The disclosed method and device allow for significant cost and material waste savings over current semiconductor production technologies.
Public/Granted literature
- US20130119518A1 SEMICONDUCTOR FORMATION BY LATERAL DIFFUSION LIQUID PHASE EPITAXY Public/Granted day:2013-05-16
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