Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15590572Application Date: 2017-05-09
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Publication No.: US09824961B2Publication Date: 2017-11-21
- Inventor: Takuya Kadoguchi , Takanori Kawashima
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- Priority: JP2013-244325 20131126
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/495 ; H01L23/498 ; H01L23/49 ; H01L23/528 ; H01L23/48 ; H01L23/00

Abstract:
A semiconductor device includes a substrate, a semiconductor element, a terminal and a solder outflow prevention part. The semiconductor element is fixed on one side of the substrate via a first solder layer. The terminal that is fixed on the one side of the substrate via a second solder layer. The solder outflow prevention part is formed between the semiconductor element and the terminal in the one side of the substrate and is configured to prevent the first solder layer and the second solder layer from outflowing. A distance between the solder outflow prevention part and the semiconductor element is longer than a thickness of the first solder layer.
Public/Granted literature
- US20170243812A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-08-24
Information query
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