Invention Grant
- Patent Title: Semiconductor package with Pillar-Top-Interconnection (PTI) configuration and its MIS fabricating method
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Application No.: US14960962Application Date: 2015-12-07
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Publication No.: US09825005B2Publication Date: 2017-11-21
- Inventor: Yun-Hsin Yeh , Hung-Hsin Hsu
- Applicant: POWERTECH TECHNOLOGY INC.
- Applicant Address: TW Hsinchu County
- Assignee: Powertech Technology Inc.
- Current Assignee: Powertech Technology Inc.
- Current Assignee Address: TW Hsinchu County
- Agency: JCIPRNET
- Priority: TW104127307A 20150821
- Main IPC: H01L25/04
- IPC: H01L25/04 ; H01L23/31 ; H01L23/48 ; H01L25/065 ; H01L23/00 ; H01L23/498 ; H01L21/683 ; H01L25/00 ; H01L21/48 ; H01L21/56 ; H01L25/10

Abstract:
Disclosed is a semiconductor package with Pillar-Top-Interconnection (PTI) configuration, comprising a redistribution layer (RDL) formed on a carrier plane, a plurality of metal pillars disposed on the RDL, a chip bonded onto the RDL, and a molding core. The molding core is formed on the carrier plane and has a bottom surface defined by the carrier plane so that the RDL is embedded inside the molding core. The package thickness of the molding core is greater than the chip-bonding height of the chip so that the chip is completely embedded inside the molding core. The metal pillars are encapsulated at the peripheries of the molding core with a plurality of pillar top portions exposed from the molding core. The exposed pillar top portions are reentrant from a top surface of the molding core and uneven. Accordingly, it realizes the effects of ultra-thin and smaller footprint POP stacked assembly with fine pitch vertically electrical connections in POP structure. Also, it is possible to achieve zero spacing between POP stacked assembly.
Public/Granted literature
- US20170053898A1 SEMICONDUCTOR PACKAGE WITH PILLAR-TOP-INTERCONNECTION (PTI) CONFIGURATION AND ITS MIS FABRICATING METHOD Public/Granted day:2017-02-23
Information query
IPC分类: