Invention Grant
- Patent Title: Semiconductor device and manufacturing method of semiconductor device
-
Application No.: US14997515Application Date: 2016-01-16
-
Publication No.: US09825049B2Publication Date: 2017-11-21
- Inventor: Naohiro Hosoda , Daisuke Okada , Kozo Katayama
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2011-220254 20111004; JP2012-172569 20120803
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L29/792 ; H01L21/336 ; H01L27/11568 ; H01L27/115 ; H01L29/66 ; H01L29/423
Abstract:
A semiconductor device of the present invention has a first insulating film formed between a control gate electrode and a semiconductor substrate and a second insulating film formed between a memory gate electrode and the semiconductor substrate and between the control gate electrode and the memory gate electrode, the second insulating film having a charge accumulating part therein. The second insulating film has a first film, a second film serving as a charge accumulating part disposed on the first film, and a third film disposed on the second film. The third film has a sidewall film positioned between the control gate electrode and the memory gate electrode and a deposited film positioned between the memory gate electrode and the semiconductor substrate. In this structure, the distance at a corner part of the second insulating film can be increased, and electric-field concentration can be reduced.
Public/Granted literature
- US20160133641A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-05-12
Information query
IPC分类:
