Invention Grant
- Patent Title: Thin film transistor substrate and method of manufacturing a thin film transistor substrate
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Application No.: US14990383Application Date: 2016-01-07
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Publication No.: US09825066B2Publication Date: 2017-11-21
- Inventor: Myung-Kwan Ryu , Eok-Su Kim , Kyoung Seok Son , Seung-Ha Choi , Sho-Yeon Kim , Hyun Kim , Eun-Hye Park , Byung-Hwan Chu
- Applicant: SAMSUNG DISPLAY CO., LTD
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2015-0008799 20150119
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L29/417
Abstract:
A thin film transistor substrate includes a gate electrode, a channel layer overlapping the gate electrode, a source electrode overlapping the channel layer, a drain electrode overlapping the channel layer and the source electrode, and a spacer disposed between the source electrode and the drain electrode.
Public/Granted literature
- US20160211281A1 THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE Public/Granted day:2016-07-21
Information query
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