Invention Grant
- Patent Title: Bidirectional Zener diode
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Application No.: US15041019Application Date: 2016-02-10
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Publication No.: US09825187B2Publication Date: 2017-11-21
- Inventor: Hiroki Yamamoto
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2014-43187 20140305; JP2014-43188 20140305; JP2014-43189 20140305; JP2014-43190 20140305; JP2014-43191 20140305; JP2014-225236 20141105
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/866 ; H01L29/417 ; H01L27/02 ; H01L29/747 ; H01L29/66 ; H01L29/06
Abstract:
A bidirectional Zener diode of the present invention includes a semiconductor substrate of a first conductivity type, a first electrode and a second electrode which are defined on the semiconductor substrate, and a plurality of diffusion regions of a second conductivity type, which are defined at intervals from one another on a surface portion of the semiconductor substrate, to define p-n junctions with the semiconductor substrate, and the plurality of diffusion regions include diode regions which are electrically connected to the first electrode and the second electrode, and pseudo-diode regions which are electrically isolated from the first electrode and the second electrode.
Public/Granted literature
- US20160163883A1 BIDIRECTIONAL ZENER DIODE Public/Granted day:2016-06-09
Information query
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