Invention Grant
- Patent Title: Efuse bit cell, and read/write method thereof, and efuse array
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Application No.: US15333894Application Date: 2016-10-25
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Publication No.: US09830996B2Publication Date: 2017-11-28
- Inventor: Chia Chi Yang
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201510707364 20151027
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/18 ; G11C17/16

Abstract:
The present disclosure provides Efuse bit cells and read/write methods thereof, and Efuse arrays. An exemplary Efuse bit cell includes a data latch configured to latch data of the Efuse bit cell, having two branches with a fuse disposed in a first branch and a resistor disposed in a second branch; a selection controller configured to control connections between one terminal of the first branch and a power source and between one terminal of the second branch and the power source, another terminal of the first branch and another terminal of the second branch being connected to ground; a first diode and a second diode, one of the first diode and the second diode being configured to input a write data signal; and a pass unit configured to transmit data stored in the Efuse bit cell and output a bit line signal.
Public/Granted literature
- US20170117059A1 EFUSE BIT CELL, AND READ/WRITE METHOD THEREOF, AND EFUSE ARRAY Public/Granted day:2017-04-27
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