Invention Grant
- Patent Title: Method for adjusting effective work function of metal gate
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Application No.: US14407210Application Date: 2013-08-30
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Publication No.: US09831089B2Publication Date: 2017-11-28
- Inventor: Hong Yang , Wenwu Wang , Jiang Yan , Weichun Luo
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Beijing
- Agency: Christensen, Fonder, Dardi & Herbert PLLC
- Priority: CN201310331607 20130801
- International Application: PCT/CN2013/082661 WO 20130830
- International Announcement: WO2015/014004 WO 20150205
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/8238 ; H01L21/321 ; H01L29/51 ; H01L29/66
Abstract:
A method for adjusting an effective work function of a metal gate. The method includes forming a metal gate arrangement comprising at least a metal work function layer, and performing plasma treatment on at least one layer in the metal gate arrangement. In this way, it is possible to adjust the effective work function of the metal gate in a relatively flexible way.
Public/Granted literature
- US20160240382A1 METHOD FOR ADJUSTING EFFECTIVE WORK FUNCTION OF METAL GATE Public/Granted day:2016-08-18
Information query
IPC分类:
