Invention Grant
- Patent Title: Method of forming a biCMOS semiconductor chip that increases the betas of the bipolar transistors
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Application No.: US15420296Application Date: 2017-01-31
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Publication No.: US09831135B2Publication Date: 2017-11-28
- Inventor: Natalia Lavrovskaya , Alexei Sadovnikov , Andrew D. Strachan
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Tuenlap D. Chan; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/337
- IPC: H01L21/337 ; H01L21/8249 ; H01L29/66 ; H01L21/8238 ; H01L29/10 ; H01L29/08 ; H01L27/06 ; H01L29/866 ; H01L29/06 ; H01L29/732
Abstract:
The betas of the bipolar transistors in a BiCMOS semiconductor structure are increased by forming the emitters of the bipolar transistors with two implants: a source-drain implant that forms a first emitter region at the same time that the source and drain regions are formed, and an additional implant that forms a second emitter region at the same time that another region is formed. The additional implant has an implant energy that is greater than the implant energy of the source-drain implant.
Public/Granted literature
- US20170140991A1 METHOD OF FORMING A BICMOS SEMICONDUCTOR CHIP THAT INCREASES THE BETAS OF THE BIPOLAR TRANSISTORS Public/Granted day:2017-05-18
Information query
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