Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15168550Application Date: 2016-05-31
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Publication No.: US09831209B2Publication Date: 2017-11-28
- Inventor: Takafumi Betsui , Motoo Suwa
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2015-152813 20150731
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L23/00 ; H01L23/498 ; H01L25/065

Abstract:
Provided is a semiconductor device which can be prevented from increasing in size. The semiconductor device includes a semiconductor chip having a first main surface and a second main surface opposite to the first main surface and a wiring substrate over which the semiconductor chip is mounted such that the second main surface of the semiconductor chip faces a first main surface of the wiring substrate. Over the second main surface of the semiconductor chip, a plurality of first terminals connected with a first circuit and a plurality of second terminals connected with a second circuit are arranged. An arrangement pattern of the plurality of first terminals and an arrangement pattern of the plurality of second terminals include the same arrangement pattern. In a region of the wiring substrate where the first circuit is close to the second circuit when viewed from the first main surface of the semiconductor chip, a voltage line which supplies a power supply voltage to the first circuit is formed. In a region of the wiring substrate where the second circuit is close to the first circuit, a voltage line which supplies the power supply voltage to the second circuit is formed.
Public/Granted literature
- US20170033070A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-02-02
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