Invention Grant
- Patent Title: Method of manufacturing semiconductor device and non-transitory computer-readable recording medium
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Application No.: US15271962Application Date: 2016-09-21
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Publication No.: US09831249B2Publication Date: 2017-11-28
- Inventor: Masanori Nakayama , Hiroto Igawa
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2015-189708 20150928
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/108
Abstract:
A semiconductor manufacturing method includes preparing a substrate having a metal film formed on a surface thereof; forming an oxide layer by oxidizing a surface of the metal film by plasma of a mixed gas of an oxygen-containing gas and a hydrogen-containing gas; and forming a thin film on the oxide layer by supplying at least an oxidizing gas to the substrate.
Public/Granted literature
- US20170092647A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM Public/Granted day:2017-03-30
Information query
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