- Patent Title: Image sensors including non-uniformly doped transfer gate in recess
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Application No.: US15258812Application Date: 2016-09-07
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Publication No.: US09831279B2Publication Date: 2017-11-28
- Inventor: Younggu Jin , Jungchak Ahn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0127754 20150909
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
An image sensor includes a photoelectric conversion portion providing a recessed region, a transfer gate provided in the recessed region, and a floating diffusion region adjacent the transfer gate. The transfer gate includes a first pattern and a second pattern, which are sequentially stacked in the recessed region and have different conductivity types from each other.
Public/Granted literature
- US20170069672A1 IMAGE SENSORS INCLUDING NON-UNIFORMLY DOPED TRANSFER GATE IN RECESS Public/Granted day:2017-03-09
Information query
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