Invention Grant
- Patent Title: Semiconductor device having vertical semiconductor pillars
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Application No.: US15370721Application Date: 2016-12-06
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Publication No.: US09831308B2Publication Date: 2017-11-28
- Inventor: Zhongshan Hong
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION , SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Beijing CN Shanghai
- Assignee: Semiconductor Manufacturing International (Beijing) Corporation,Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Beijing) Corporation,Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Beijing CN Shanghai
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN201410500240 20140926
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/00 ; H01L29/06 ; H01L21/3065 ; H01L21/308 ; H01L21/306 ; B82Y30/00
Abstract:
A semiconductor device includes a plurality of substantially vertical semiconductor pillars on a substrate, and a hard mask layer overlying the plurality of semiconductor pillars. A contiguous portion of the hard mask layer connects two or more of the plurality of semiconductor pillars.
Public/Granted literature
- US20170084691A1 SEMICONDUCTOR DEVICE HAVING VERTICAL SEMICONDUCTOR PILLARS Public/Granted day:2017-03-23
Information query
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