Invention Grant
- Patent Title: High-voltage nitride device and manufacturing method thereof
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Application No.: US15247044Application Date: 2016-08-25
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Publication No.: US09831333B2Publication Date: 2017-11-28
- Inventor: Kai Cheng
- Applicant: ENKRIS SEMICONDUCTOR, INC.
- Applicant Address: CN Suzhou
- Assignee: Enkris Semiconductor, Inc.
- Current Assignee: Enkris Semiconductor, Inc.
- Current Assignee Address: CN Suzhou
- Agency: Flener IP Law
- Agent Zareefa B. Flener
- Priority: CN201310049853 20130207
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/205 ; H01L29/66 ; H01L21/02 ; H01L21/306 ; H01L21/3065 ; H01L29/06 ; H01L29/20 ; H01L29/78 ; H01L29/10
Abstract:
A high-voltage nitride device which can avoid vertical breakdown and has a high breakdown voltage includes: a silicon substrate; a nitride epitaxial layer, prepared on the silicon substrate; a positive electrode and a negative electrode, both of which are contacted with the nitride epitaxial layer; and at least one spatial isolation area, formed in a region between the silicon substrate and the nitride epitaxial layer vertically and between the positive electrode and the negative electrode horizontally.
Public/Granted literature
- US20160365436A1 High-voltage Nitride Device and Manufacturing Method Thereof Public/Granted day:2016-12-15
Information query
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