A semiconductor device includes a lower wiring layer formed on a substrate; a lower insulating layer formed on the lower wiring layer; an upper wiring layer formed on the lower insulating layer, the upper wiring layer intersecting with the lower wiring layer across the lower insulating layer to form a wiring cross portion; and an island-shaped upper insulating layer formed on the lower insulating layer so as to be in contact with the upper wiring layer, wherein the upper wiring layer includes a first portion formed on the upper face of the lower insulating layer and a second portion disposed on the wiring cross portion and formed on a side wall of the upper insulating layer, and wherein the upper wiring layer is not formed on the upper face of the upper insulating layer at the wiring cross portion.