Invention Grant
- Patent Title: Method for manufacturing MEMS torsional electrostatic actuator
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Application No.: US15327230Application Date: 2015-07-31
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Publication No.: US09834437B2Publication Date: 2017-12-05
- Inventor: Errong Jing
- Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.
- Applicant Address: CN Jiangsu
- Assignee: CSMC TECHNOLOGIES FABI CO., LTD.
- Current Assignee: CSMC TECHNOLOGIES FABI CO., LTD.
- Current Assignee Address: CN Jiangsu
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN201410724507 20141202
- International Application: PCT/CN2015/085765 WO 20150731
- International Announcement: WO2016/086682 WO 20160609
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81B3/00

Abstract:
A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate, wherein the substrate comprises a first silicon layer, a buried oxide layer and a second silicon layer that are laminated sequentially; patterning the first silicon layer and exposing the buried oxide layer to form a rectangular upper electrode plate separated from a peripheral region, wherein the upper electrode plate and the peripheral region are connected by only using a cantilever beam, and forming, on the peripheral region, a recessed portion exposing the buried oxide layer; patterning the second silicon layer and exposing the buried oxide layer to form a back cavity, wherein the back cavity is located in a region of the second silicon layer corresponding to the upper electrode plate, covers 40% to 60% of the area of the region corresponding to the upper electrode plate, and is close to one end of the cantilever beam; exposing the second silicon layer, and suspending the upper electrode plate and the cantilever beam; and respectively forming an upper contact electrode and a lower contact electrode on the second silicon layer.
Public/Granted literature
- US20170174508A1 METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR Public/Granted day:2017-06-22
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