Invention Grant
- Patent Title: Method for manufacturing monocrystalline graphene
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Application No.: US15103368Application Date: 2014-12-26
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Publication No.: US09834855B2Publication Date: 2017-12-05
- Inventor: Chanyong Hwang
- Applicant: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Applicant Address: KR Daejeon
- Assignee: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Current Assignee: KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Current Assignee Address: KR Daejeon
- Agency: Mayer & Williams PC
- Agent Stuart H. Mayer
- Priority: KR10-2013-0167109 20131230
- International Application: PCT/KR2014/012902 WO 20141226
- International Announcement: WO2015/102318 WO 20150709
- Main IPC: C30B25/02
- IPC: C30B25/02 ; C30B1/08 ; C23C16/26 ; C01B31/04 ; C30B29/02
Abstract:
The present invention provides a method for manufacturing a monocrystalline graphene layer, comprising the steps of: forming polycrystalline graphene on a substrate by using a hydrocarbon gas to grow a graphene layer aligned on a wafer-scale insulator substrate in one direction like a monocrystal; forming a catalyst on the polycrystalline graphene; and recrystallizing the polycrystalline graphene to monocrystalline graphene by heat-treating the polycrystalline graphene and the catalyst.
Public/Granted literature
- US20170009371A1 METHOD FOR MANUFACTURING MONOCRYSTALLINE GRAPHENE Public/Granted day:2017-01-12
Information query
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