Invention Grant
- Patent Title: X-ray diffraction (XRD) characterization methods for sigma=3 twin defects in cubic semiconductor (100) wafers
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Application No.: US14484517Application Date: 2014-09-12
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Publication No.: US09835570B2Publication Date: 2017-12-05
- Inventor: Yeonjoon Park , Hyun Jung Kim , Jonathan R. Skuza , Kunik Lee , Glen C. King , Sang Hyouk Choi
- Applicant: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Administrator of NASA
- Current Assignee: The United States of America as represented by the Administrator of NASA
- Current Assignee Address: US DC Washington
- Agent Jennifer L. Riley; Robin W. Edwards; Mark P. Dvorscak
- Main IPC: G01N23/207
- IPC: G01N23/207 ; G01N23/20
Abstract:
An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.
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