Invention Grant
- Patent Title: Current generation circuits and semiconductor devices including the same
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Application No.: US14446039Application Date: 2014-07-29
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Publication No.: US09836074B2Publication Date: 2017-12-05
- Inventor: Hae Rang Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si, Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si, Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2014-0019709 20140220
- Main IPC: G05F3/04
- IPC: G05F3/04 ; G05F3/26

Abstract:
Semiconductor devices are provided. The semiconductor device may include a current generation circuit and an internal circuit. The current generation circuit may include a first drive element and a second drive element which are connected in series. The current generation circuit may generate a reference voltage signal whose voltage level is set by a reference current which is identical or substantially identical to a current flowing through the first and second drive elements. The internal circuit may utilize an output current controlled according to the reference current as an operation current thereof.
Public/Granted literature
- US20150236579A1 CURRENT GENERATION CIRCUITS AND SEMICONDUCTOR DEVICES INCLUDING THE SAME Public/Granted day:2015-08-20
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