Invention Grant
- Patent Title: Methods for addressing high capacity SDRAM-like memory without increasing pin cost
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Application No.: US15227911Application Date: 2016-08-03
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Publication No.: US09837135B2Publication Date: 2017-12-05
- Inventor: Mu-Tien Chang , Dimin Niu , Hongzhong Zheng , Sun Young Lim , Indong Kim , Jangseok Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C8/08 ; G11C13/00

Abstract:
A method for addressing memory device data arranged in rows and columns indexed by a first number of row address bits and a second number of column address bits, and addressed by a row command specifying a third number of row address bits followed by a column command specifying a fourth number of column address bits, the first number being greater than the third number or the second number being greater than the fourth number, includes: splitting the first number of row address bits into first and second subsets, and specifying the first subset in the row command and the second subset in a next address command when the first number is greater than the third number; otherwise splitting the second number of column address bits into third and fourth subsets, and specifying the fourth subset in the column command and the third subset in a previous address command.
Public/Granted literature
- US20170256311A1 METHODS FOR ADDRESSING HIGH CAPACITY SDRAM-LIKE MEMORY WITHOUT INCREASING PIN COST Public/Granted day:2017-09-07
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