A memory module, including a plurality of memory cells and a plurality of signal lines for communicating with a processing device. The memory module is configured such that following reception of a command and upon encountering a first condition while processing the command, the memory module limits a voltage on a first signal line of the plurality of signal lines to be no more than an intermediate voltage greater than voltage levels corresponding to a binary zero state and less than voltage levels corresponding to a binary one state for a period of time for indicating an occurrence of the first condition.