Invention Grant
- Patent Title: Resistive random access memory (RRAM) system
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Application No.: US15500472Application Date: 2015-04-15
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Publication No.: US09837154B2Publication Date: 2017-12-05
- Inventor: Brent Buchanan
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Tarolli, Sundheim, Covell & Tummino L.L.P.
- International Application: PCT/US2015/025860 WO 20150415
- International Announcement: WO2016/167756 WO 20161020
- Main IPC: G11C13/00
- IPC: G11C13/00

Abstract:
One example includes a resistive random access memory (RRAM) system. The system includes a resistive memory element to store a binary state based on a resistance of the resistive memory element. The system also includes an RRAM write circuit to generate a current through the resistive memory element to provide a write voltage across the resistive memory element to set the resistance of the resistive memory element. The system further includes a write shutoff circuit to monitor a change in the write voltage as a function of time to deactivate the RRAM write circuit in response to a change in the binary state of the resistive memory element.
Public/Granted literature
- US20170221562A1 RESISTIVE RANDOM ACCESS MEMORY (RRAM) SYSTEM Public/Granted day:2017-08-03
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