Invention Grant
- Patent Title: Semiconductor device and semiconductor integrated circuit
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Application No.: US15363125Application Date: 2016-11-29
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Publication No.: US09837162B2Publication Date: 2017-12-05
- Inventor: Masayuki Kawae , Takafumi Noguchi , Atsuo Yoneyama
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2015-247356 20151218
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C16/30 ; G11C16/34

Abstract:
A semiconductor device that can rapidly stabilize a control voltage for controlling an electric current source is provided.A semiconductor device includes a filter circuit that is provided between a control voltage generation circuit and an electric current source and removes noise of the control voltage. The filter circuit includes a first resistive element that is provided between the control voltage generation circuit and an output node that outputs the control voltage, a first capacitive element that is provided between the output node and a first voltage, a second capacitive element that is coupled between the output node and the first voltage via a first switch element. The second capacitive element is coupled between the first voltage and a second voltage when the first switch element is non-conductive. The second capacitive element is coupled with the first capacitive element through the output node when the first switch element is conductive.
Public/Granted literature
- US20170178735A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2017-06-22
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