Invention Grant
- Patent Title: Raised fin structures and methods of fabrication
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Application No.: US15154444Application Date: 2016-05-13
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Publication No.: US09837268B2Publication Date: 2017-12-05
- Inventor: Yi Qi , Xunyuan Zhang , Catherine B. Labelle
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley and Mesiti PC
- Agent Nicholas Mesiti
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; H01L21/311 ; H01L29/66 ; H01L29/78
Abstract:
A method of fabricating raised fin structures is provided, the fabricating including: providing a substrate and at least one dielectric layer over the substrate; forming a trench in the at least one dielectric layer, the trench having a lower portion, a lateral portion, and an upper portion, the upper portion being at least partially laterally offset from the lower portion and being joined to the lower portion by the lateral portion; and, growing a material in the trench to form the raised fin structure, wherein the trench is formed to ensure that any growth defect in the lower portion of the trench terminates either in the lower portion or the lateral portion of the trench and does not extend into the upper portion of the trench.
Public/Granted literature
- US20160260605A1 RAISED FIN STRUCTURES AND METHODS OF FABRICATION Public/Granted day:2016-09-08
Information query
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