A method for producing a substantially planar surface for semiconductor processing to improve lithography, planarization, and other process steps that benefit from a flat substrate. The method includes depositing a first alloy to form a first layer on a substrate. The first layer has a center high deposition, meaning the height in the center of the substrate is higher than the height at the edges of the substrate. The method further includes depositing a second alloy on the first layer to form a second layer. The first alloy has a different composition than the second alloy. In such a method the net deposition is substantially planar reducing or eliminating deposition induced long-range distortions that might occur across a substrate.