Invention Grant
- Patent Title: Manufacturing method of semiconductor device and semiconductor device manufacturing apparatus
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Application No.: US15066408Application Date: 2016-03-10
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Publication No.: US09837279B2Publication Date: 2017-12-05
- Inventor: Akifumi Gawase , Yukiteru Matsui , Takahiko Kawasaki
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2015-183159 20150916
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00 ; H01L21/306 ; H01L21/67 ; H01L21/687
Abstract:
In accordance with an embodiment, a manufacturing method of a semiconductor device includes bringing a first catalyst into contact with a workpiece to form an oxide film on a surface of the workpiece, and bringing a second catalyst different from the first catalyst and the oxide film into contact with each other or moving the second catalyst and the oxide film closer to each other to elute the oxide film into a treatment liquid.
Public/Granted literature
- US20170076953A1 Manufacturing Method of Semiconductor Device and Semiconductor Device Manufacturing Apparatus Public/Granted day:2017-03-16
Information query
