Invention Grant
- Patent Title: Semiconductor via structure with lower electrical resistance
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Application No.: US14945640Application Date: 2015-11-19
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Publication No.: US09837309B2Publication Date: 2017-12-05
- Inventor: Lawrence A. Clevenger , Baozhen Li , Kirk D. Peterson , Terry A. Spooner , Junli Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Steven Meyers
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/532 ; H01L23/522

Abstract:
A semiconductor device and method of making the same, wherein in accordance with an embodiment of the present invention, the device includes a first conductive line including a first conductive material, and a second conductive line including a second conductive material. A via connects the first conductive line to the second conductive line, wherein the via includes conductive via material, wherein the via material top surface is coated with a liner material, wherein the via is a bottomless via.
Public/Granted literature
- US20170148673A1 SEMICONDUCTOR VIA STRUCTURE WITH LOWER ELECTRICAL RESISTANCE Public/Granted day:2017-05-25
Information query
IPC分类: