Invention Grant
- Patent Title: Conductive plug structure and fabrication method thereof
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Application No.: US15277853Application Date: 2016-09-27
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Publication No.: US09837311B2Publication Date: 2017-12-05
- Inventor: Liang Wang , Xiaotian Ma
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION,SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201510640892 20150930
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L23/52 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L21/288

Abstract:
The present disclosure provides conductive plug structures and fabrication methods thereof. An exemplary fabrication process of the conductive plug structure includes providing a substrate; forming a mask layer having an opening on a surface of the substrate; etching the substrate to form a contact hole using the mask layer as an etching mask; etching the mask layer to increase a feature size of the opening; forming an insulation layer on an inner surface of the opening, an inner surface of the enlarged opening and a surface of the mask layer to have more edge corners, a thickness of the insulation layer being greater than a thickness of the remaining mask layer; forming a conductive layer filling the contact hole on the insulation layer; and planarizing the conductive layer and the insulation layer until a surface of the mask layer is exposed.
Public/Granted literature
- US20170092537A1 CONDUCTIVE PLUG STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2017-03-30
Information query
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