Invention Grant
- Patent Title: MOSFET devices with asymmetric structural configurations introducing different electrical characteristics
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Application No.: US15582962Application Date: 2017-05-01
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Publication No.: US09837320B2Publication Date: 2017-12-05
- Inventor: John C. Pritiskutch , Richard Hildenbrandt
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Gardere Wynne Sewell LLP
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8234 ; H01L21/265 ; H01L21/324 ; H01L21/225 ; H01L21/266 ; H01L27/088 ; H01L29/10 ; H01L29/78
Abstract:
First and second transistors with different electrical characteristics are supported by a substrate having a first-type dopant. The first transistor includes a well region within the substrate having the first-type dopant, a first body region within the well region having a second-type dopant and a first source region within the first body region and laterally offset from the well region by a first channel. The second transistor includes a second body region within the semiconductor substrate layer having the second-type dopant and a second source region within the second body region and laterally offset from material of the substrate by a second channel having a length greater than the length of the first channel. A gate region extends over portions of the first and second body regions for the first and second channels, respectively.
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