Voids in interconnect structures and methods for forming the same

Invention Grant

US09837348B2 Voids in interconnect structures and methods for forming the same 有权

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Patent Title: Voids in interconnect structures and methods for forming the same
Application No.: US14809478

Application Date: 2015-07-27
Publication No.: US09837348B2

Publication Date: 2017-12-05
Inventor: Jiun-Jie Huang , Ling-Sung Wang
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Slater Matsil, LLP
Main IPC: H01L23/52
IPC: H01L23/52 ; H01L23/522 ; H01L49/02 ; H01L23/528 ; H01L21/311 ; H01L23/532 ; H01L21/768

Voids in interconnect structures and methods for forming the same

Abstract:

A device includes a dielectric layer, a passive device including a portion in the dielectric layer, and a plurality of voids in the dielectric layer and encircling the passive device.

Public/Granted literature

US20150333003A1 Voids in Interconnect Structures and Methods for Forming the Same Public/Granted day:2015-11-19

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/52	.用于在处于工作中的器件内部从一个组件向另一个组件通电的装置