Invention Grant
- Patent Title: Method of manufacturing a device
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Application No.: US14425407Application Date: 2013-09-09
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Publication No.: US09837374B2Publication Date: 2017-12-05
- Inventor: Hideki Matsushita , Masanobu Kitada
- Applicant: KYOCERA Corporation
- Applicant Address: JP Kyoto-Shi, Kyoto
- Assignee: KYOCERA CORPORATION
- Current Assignee: KYOCERA CORPORATION
- Current Assignee Address: JP Kyoto-Shi, Kyoto
- Agency: Volpe and Koenig, P.C.
- Priority: JP2012-196886 20120907
- International Application: PCT/JP2013/074256 WO 20130909
- International Announcement: WO2014/038693 WO 20140313
- Main IPC: B32B38/00
- IPC: B32B38/00 ; H01L23/00 ; C23C14/18 ; C23C14/46 ; B32B37/18 ; B32B37/24 ; H01L21/20

Abstract:
Provided is a device in which the metal content existing in a joining interface is controlled. A manufacturing method for the device comprises: a step in which the surfaces of a first substrate and a second substrate are activated using a FAB gun; a step in which a plurality of metals are discharged by using the FAB gun to sputter a discharged metal body comprising the plurality of metals, and the plurality of metals are affixed to the surfaces of the first substrate and the second substrate; a step in which the first substrate and the second substrate are joined at room temperature; and a step in which heating is performed at a temperature that is high in comparison to the agglomeration start temperature of the plurality of metals and of the elements that constitute the first substrate or the second substrate. With regards to the step in which the plurality of metals are affixed, the density of the plurality of metals existing on the joining interface of the first substrate and the second substrate is set to 1×1012/cm2 or less by adjusting the exposure area of the discharged metal body.
Public/Granted literature
- US20150206853A1 METHOD OF MANUFACTURING A DEVICE Public/Granted day:2015-07-23
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