Invention Grant
- Patent Title: Semiconductor arrangement having capacitor separated from active region
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Application No.: US15289293Application Date: 2016-10-10
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Publication No.: US09837421B2Publication Date: 2017-12-05
- Inventor: Chern-Yow Hsu , Cheng-Jong Wang , Chia-Shiung Tsai , Shih-Chang Liu , Xiaomeng Chen
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/108 ; H01L21/311 ; H01L21/3213
Abstract:
A semiconductor arrangement includes an active region including a semiconductor device. The semiconductor arrangement includes a capacitor having a first electrode layer, a second electrode layer, and an insulating layer between the first electrode layer and the second electrode layer. At least three dielectric layers are between a bottom surface of the capacitor and the active region.
Public/Granted literature
- US20170025417A1 SEMICONDUCTOR ARRANGEMENT HAVING CAPACITOR SEPARATED FROM ACTIVE REGION Public/Granted day:2017-01-26
Information query
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