Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15412465Application Date: 2017-01-23
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Publication No.: US09837427B2Publication Date: 2017-12-05
- Inventor: Masaaki Shinohara
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2016-018589 20160203
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/266 ; H01L27/11568 ; H01L21/311 ; H01L21/265 ; H01L29/66 ; H01L21/02 ; G11C16/10 ; G11C16/14 ; G11C16/26 ; H01L27/11573 ; H01L21/28 ; H01L29/792 ; H01L29/423 ; G11C16/04
Abstract:
Deterioration in reliability is prevented regarding a semiconductor device. The deterioration is caused when an insulating film for formation of a sidewall is embedded between gate electrodes at the time of forming sidewalls having two kinds of different widths on a substrate. A sidewall-shaped silicon oxide film is formed over each sidewall of a gate electrode of a low breakdown voltage MISFET and a pattern including a control gate electrode and a memory gate electrode. Then, a silicon oxide film beside the gate electrode is removed, and a silicon oxide film is formed on a semiconductor substrate, and then etchback is performed. Accordingly, a sidewall, formed of a silicon nitride film and the silicon oxide film, is formed beside the gate electrode, and a sidewall, formed of the silicon nitride film and the silicon oxide films, is formed beside the pattern.
Public/Granted literature
- US20170221917A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-08-03
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